CFD-TOPO

CFD-TOPO is a feature scale evolution solver used to predict the transport, chemistry, etch and deposition of semiconductor materials on the microscopic scale. It enables prediction of three-dimensional topological evolution for multiple materials during thermal or plasma enhanced fabrication of electronic devices.

Inductively Coupled Plasma Reactor

Designed primarily for the Semiconductor industry, CFD-TOPO is a flexible, modular software package that can be operated as a stand-alone code, or coupled with CFD-ACE+ reactor scale models for an integrated multi-scale solution. Advanced capabilities of CFD-TOPO include:

• Three-dimensional
• Multiple materials and complex chemistries
• Fast adaptive meshing
• Fully integrated with CFD-ACE+
• Fully commercialized and supported
• Can be customized for a specific reactor or processes, for ease-of-use and accuracy